Analog & Power

Features
・ Short circuit withstand time (5 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (100 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Short circuit withstand time (5 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (100 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Short circuit withstand time (5 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (100 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Short circuit withstand time (5 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (100 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Short circuit withstand time (6 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (25 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 Ω, inductive load)

Features
・ Short circuit withstand time (6 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (25 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Short circuit withstand time (6 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (25 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Short circuit withstand time (6 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode (25 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25℃)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Tj = 125℃, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25℃)
・ High speed switching
・ Short circuit withstands time (10 μs min.)

Features
･ Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25℃)
･ High speed switching
･ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25℃)
・ High speed switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25℃)
・ High speed switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25℃)
・ High speed switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25℃)
・ High speed switching
・ Short circuit withstands time (10 μs min.)

Features
・ VCES : 430 V
・ TO-220FL package
・ High Speed Switching

Features
・ VCES : 500 V
・ TO-220FL package
・ High Speed Switching

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25℃)
・ Trench gate and thin wafer technology
・ High speed switching
tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25℃, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25℃)
・ High speed switching
tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25℃)
・ High speed Switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25℃)
・ High speed Switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25℃)
・ High speed Switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25℃)
・ High speed Switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25℃)
・ High speed Switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25℃)
・ High speed Switching
・ Short circuit withstands time (10 μs min.)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25℃)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25℃, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25℃)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ Short circuit withstand time (5 μs typ.)
・ Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25℃)
・ Built in fast recovery diode (100 ns typ.) in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 Ω, Ta = 25℃, inductive load)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.84 Ω typ. (at ID = 2.2A, VGS = 10 V, Ta = 25℃ )

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.84 Ω typ. (at ID = 2.2A, VGS = 10 V, Ta = 25℃)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.53 Ω typ. (at ID = 4 A, VGS = 10 V, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.53 Ω typ. (at ID = 4 A, VGS = 10 V, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25 °C)
・ High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 Ω, Rg = 10 Ω, Ta = 25 °C

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.100 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Low on-resistance
RDS(on) = 0.045 Ω typ. (at ID = 27.5 A, VGS = 10 V, Ta = 25°C)
・ High speed switching
tf = 42 ns typ. (at ID = 27.5 A, VGS = 10 V, RL = 10.9 Ω, Rg = 10 Ω, Ta = 25°C)

Features
・ Superjunction MOSFET
・ Built-in fast recovery diode
・ Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
・ High speed switching

Features
・ Superjunction MOSFET
・ Built-in fast recovery diode
・ Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
・ High speed switching

Features
・ Superjunction MOSFET
・ Built-in fast recovery diode
・ Low on-resistance
RDS(on) = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C)
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.13 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃)
・ Low leakage current
・ High speed switching
・ Built-in fast recovery diode

Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
・ Low input capacitance
Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
・ High current
ID(DC) = ±82 A
・ RoHS Compliant

Description
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS(on) = 55 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on) = 68 mΩ MAX. (VGS = 5 V, ID = 10 A)
RDS(on) = 74 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
・ Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V)
・ Logic level drive type
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS(on) = 47 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on) = 64 mΩ MAX. (VGS = –5 V, ID = –10 A)
RDS(on) = 70 mΩ MAX. (VGS = –4.5 V, ID = –10 A)
・ Logic level drive type
・ Gate to Source ESD protection diode built in
・ Designed for automotive application and AEC-Q101 qualified

Description
The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
Features
・ Based on Intel 8 x 8 DrMOS Specification.
・ Built-in power MOS FET suitable for Desktop, Server application.
・ Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
・ Built-in driver circuit which matches the power MOS FET
・ Built-in tri-state input function which can support a number of PWM controllers
・ High-frequency operation (above 1 MHz) possible
・ VIN operating-voltage range: 20 Vmax
・ Large average output current (Max.50 A)
・ Achieve low power dissipation
・ Controllable driver: Remote on/off
・ Low-side MOS FET disabled function for DCM operation
・ Double thermal protection: Thermal Warning & Thermal Shutdown
・ Built-in bootstrapping Switch
・ Small package: QFN56 (8 mm x 8 mm x 0.95 mm)
・ Terminal Pb-free/Halogen-free

Description
The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
Features
・ Based on Intel 8 x 8 DrMOS Specification.
・ Built-in power MOS FET suitable for Desktop, Server, Notebook application.
・ Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
・ Built-in driver circuit which matches the power MOS FET
・ Built-in tri-state input function which can support a number of PWM controllers
・ High-frequency operation (above 1 MHz) possible
・ VIN operating-voltage range: 27 Vmax
・ Large average output current (Max.50 A)
・ Achieve low power dissipation
・ Controllable driver: Remote on/off
・ Low-side MOS FET disabled function for DCM operation
・ Double thermal protection: Thermal Warning & Thermal Shutdown
・ Built-in bootstrapping Switch
・ Small package: QFN56 (8 mm x 8 mm x 0.95 mm)
・ Terminal Pb-free/Halogen-free

Description
The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
Features
・ Based on Intel 6 x 6 DrMOS Specification.
・ Built-in power MOS FET suitable for Desktop, Server application.
・ Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
・ Built-in driver circuit which matches the power MOS FET
・ Built-in tri-state input function which can support a number of PWM controllers
・ High-frequency operation (above 1 MHz) possible
・ VIN operating-voltage range: 20 Vmax
・ Large average output current (Max.40 A)
・ Achieve low power dissipation
・ Controllable driver: Remote on/off
・ Support Mid-Voltage PWM signal to enter zero current detection
・ Built-in Thermal Warning
・ Built-in bootstrapping Switch
・ Small package: QFN40 (6 mm x 6 mm x 0.95 mm)
・ Terminal Pb-free/Halogen-free

Features
・ VDSS : –60 V
・ RDS(on) : 56 mΩ (MAX)
・ ID : –25 A
・ Lead Mount Type (TO-220FP)

Application
DC-DC conversion for PC and Server.
Features
・ Low on-resistance
・ Capable of 4.5 V gate drive
・ High density mounting
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 1.5 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 5.3 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 1.6 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 1.9 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 2.3 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.2 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.8 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 5.2 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 5.4 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 7.6 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 7.8 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 8.0 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 4.3 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 9.2 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 2.0 mΩ typ. (at VGS = 8.0 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 2.5 mΩ typ. (at VGS = 8.0 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.3 mΩ typ. (at VGS = 8.0 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.9 mΩ typ. (at VGS = 8.0 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 2.0 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 2.4 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = 10 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 4.6 mΩ typ. (at VGS = 8.0 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Capable of 4.5 V gate drive
・ Low drive current
・ High density mounting
・ Low on-resistance
RDS(on) = 5.7 mΩ typ. (at VGS = 8.0 V)
・ Pb-free
・ Halogen-free

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 4.1 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 3.0 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 3.0 mΩ typ. (at VGS = 10 V)
・ Package TO-220FP

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 3.9 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 3.9 mΩ typ. (at VGS = 10 V)
・ Package TO-220FP

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V)
・ Package TO-220FP

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 4.4 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 4.4 mΩ typ. (at VGS = 10 V)
・ Package TO-220FP

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V)
・ Package TO-220FP

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 8.8 mΩ typ. (at VGS = 10 V)
・ Package TO-220AB

Features
・ High speed switching
・ Low drive current
・ Low on-resistance RDS(on) = 8.8 mΩ typ. (at VGS = 10 V)
・ Package TO-220FP

Features
・ VDSS : 100 V
・ RDS(on) : 11 mΩ (Max)
・ ID : 80 A

Features
・ Very low on-resistance
RDS(on) = 0.038 Ω typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low gate charge
Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.046 Ω typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.054 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.068 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25℃)
・ Very low gate charge
Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.083 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.102 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25℃)
・ Very low gate charge
Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 3.7 Ω typ. (at ID = 0.8 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
・ Low on-state resistance
RDS(on) = 3.77 Ω typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 3 Ω typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 3.77 Ω typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
・ Low on-state resistance
RDS(on) = 3.83 Ω typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 3.83 Ω typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 2.1 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 3.83 Ω typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
・ Low on-resistance
RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
・ Low on-resistance
RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
・ Low on-resistance
RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 2.0 Ω typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 3.3 Ω typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
・ Low on-resistance
RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Description
The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source.
The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Best suite for single cell LiB application.
Features
• 2.5 V drive available
• Low on-state resistance
RSS(on)1 = 24.0 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)
RSS(on)2 = 27.0 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)
RSS(on)3 = 29.0 mΩ MAX. (VGS = 3.7 V, IS = 3.0 A)
RSS(on)4 = 35.0 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)
RSS(on)4 = 42.0 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)
•Built-in G-S protection diode against ESD

Description
The μPA2378T1P is a switching device, which can be driven directly by a 2.5 V power source.
The μPA2378T1P features a low on-state resistance and excellent switching characteristics, and is suitable for single cell LiB application.
Features
• 2.5 V drive available
• Ultra Low on-state resistance
RSS(on)1 = 11.9 mΩ MAX. (VGS = 4.5 V, IS = 4.0 A)
RSS(on)2 = 12.8 mΩ MAX. (VGS = 4.0 V, IS = 4.0 A)
RSS(on)3 = 13.0 mΩ MAX. (VGS = 3.8 V, IS = 4.0 A)
RSS(on)4 = 17.6 mΩ MAX. (VGS = 3.1 V, IS = 4.0 A)
RSS(on)5 = 26.0 mΩ MAX. (VGS = 2.5 V, IS = 4.0 A)
• Built-in G-S protection diode against ESD

Description
DESCRIPTION
The μPA2379T1P is a switching device, which can be driven directly by a 2.5 V power source.
The μPA2379T1P features a low on-state resistance and excellent switching characteristics, and is suitable for single cell LiB application.
Features
• 2.5 V drive available
• Ultra Low on-state resistance
RSS(on)1 = 11.9 mΩ MAX. (VGS = 4.5 V, IS = 4.0 A)
RSS(on)2 = 12.8 mΩ MAX. (VGS = 4.0 V, IS = 4.0 A)
RSS(on)3 = 13.0 mΩ MAX. (VGS = 3.8 V, IS = 4.0 A)
RSS(on)4 = 17.6 mΩ MAX. (VGS = 3.1 V, IS = 4.0 A)
RSS(on)5 = 26.0 mΩ MAX. (VGS = 2.5 V, IS = 4.0 A)
• Built-in G-S protection diode against ESD

Description
The μPA2380T1P is a switching device, which can be driven directly by a 2.5 V power source.
The μPA2380T1P features a low on-state resistance and excellent switching characteristics, and is suitable for single cell LiB application.
Features
• 2.5 V drive available
• Ultra low on-state resistance
RSS(on)1 = 32.5 mΩ Max. (VGS = 4.5 V, IS = 2 A)
RSS(on)2 = 37 mΩ Max. (VGS = 4.0 V, IS = 2 A)
RSS(on)3 = 39 mΩ Max. (VGS = 3.8 V, IS = 2 A)
RSS(on)4 = 52 mΩ Max. (VGS = 3.1 V, IS = 2 A)
RSS(on)5 = 75 mΩ Max. (VGS = 2.5 V, IS = 2 A)
• Built-in G-S protection diode against ESD

Features
The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
• –1.8V drive available
• Low on-state resistance
⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free

Features
The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
• –1.8V drive available
• Low on-state resistance
⎯ RDS (on)1 = 67 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
⎯ RDS (on)2 = 92 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
⎯ RDS (on)3 = 159 mΩ MAX. (VGS = –1.8 V, ID = –2.0 A)
• Built-in gate protection diode
• Lead-free and Halogen-free

Description
The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
• VDSS = −30 V (TA = 25℃)
• Low on-state resistance
⎯ RDS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free

Description
The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
• VDSS = −30 V (TA = 25℃)
• Low on-state resistance
⎯ RDS(on) = 7.0 mΩ MAX. (VGS = −10 V, ID = −14 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free

Description
The μ PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
• VDSS = −30 V (TA = 25℃)
• Low on-state resistance
⎯ RDS(on) = 13 mΩ MAX. (VGS = −10 V, ID = −11 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free

Description
The μ PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
• VDSS = −30 V (TA = 25℃)
• Low on-state resistance
⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free

Description
The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 4.8 mΩ MAX. (VGS = −10 V, ID = −30 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free

Description
The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 7.8 mΩ MAX. (VGS = −10 V, ID = −24 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free

Description
The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 11 mΩ MAX. (VGS = −10 V, ID = −21 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free

Description
The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free

Description
The μPA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 22 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader (HWSON-8)
• Pb-free, Halogen Free

Description
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
• 4.5 V Gate-drive available
• Small surface mount package (8-pin HVSON (3333))
• Pb-free, Halogen Free

Description
The μPA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 2.6 mΩ MAX. (VGS = 10 V, ID = 34 A)
• 4.5V Gate-drive available
• Small surface mount package (8-pin HVSON (3333))
• Pb-free, Halogen Free

Description
The μPA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
RDS(on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 24 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader (HWSON-8)
• Pb-free, Halogen Free

Description
The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
• Dual chip type
• Low on-state resistance
RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A)
• Low gate charge
QG = 13.4 nC TYP. (VGS = 10 V)
• Small and surface mount package (Power SOP8)

Description
The R2A25107KFP device is an intelligent power device to pre-drive the FET inverter of a 3-phase blushless motor.
This device contains three sets of pre-driver that are applicable to both 12-V and 24-V battery systems. This IC also
contains a step down converter, charge pump circuit for the power supply of high-side MOSFET gate driver, 5 V series
regulator, watchdog timer and protection circuits for thermal shutdown (TSD) and over-current detection.
Features
・ Wide operating voltage range: 7 V to 36 V (VBAT, VBAT2)
・ On-chip 3-phase pre-driver circuit
・ PWM control: up to 20 kHz
・ Totem pole type MOSFET gate drive circuit
・ On-chip power supplies
・ Step down converter: 6.2 V typ.
・ Charge pump circuit for power supply of high-side FET drive: >5 V
・ 5-V series regulator for MCU: <70 mA
・ On-chip protection circuits
・ Thermal shutdown (TSD)
・ Over-current detection in the step down converter
・ Over-current detection of motor current
・ On-chip watchdog timer circuit (WDT)
・ Band gap reference circuit
・ Internal oscillator: 265 kHz typ.
・ 48-pin LFQFP package
Application
・ Pre-driver for middle class 3-phase blushless motors (up to 50 A)
・ Best suited for automotive

Features
・ Logic level operation (4 V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12 V and 24 V.
・ For Industrial applications

Features
・ Logic level operation (4 V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12 V and 24 V.
・ For Industrial applications

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (4 V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ High density mounting
・ Power supply voltage applies 12 V and 24 V.
・ AEC-Q101 Compliant

Features
・ Logic level operation (4 V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12 V and 24 V.
・ For Industrial applications

Features
・ Logic level operation (4 V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12 V and 24 V.
・ For Industrial applications

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (4 V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ High density mounting
・ Power supply voltage applies 12 V and 24 V.
・ AEC-Q101 Compliant

Description
Dual N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions.
Features
・ Built-in charge pump
・ Low on-state resistance
・ Short circuit protection
・ Shutdown by over current detection and over load detection
・ Over temperature protection
・ Shutdown with auto-restart on cooling
・ Built-in diagnostic function
・ Proportional load current sensing
・ Defined fault signal in case of abnormal load condition
・ Loss of ground protection
・ Under voltage lock out
・ Active clamp operation at inductive load switch off
・ AEC Qualified
・ RoHS compliant with pure tin plating
Application
・ Light bulb (~55 W) switching
・ Switching of all types of 14 V DC grounded loads, such as LED, inductor, resistor and capacitor

Description
Dual N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions.
Features
・ Built-in charge pump
・ Low on-state resistance
・ Short circuit protection
・ Shutdown by over current detection and over load detection
・ Over temperature protection
・ Shutdown with auto-restart on cooling
・ Built-in diagnostic function
・ Proportional load current sensing
・ Defined fault signal in case of abnormal load condition
・ Loss of ground protection
・ Under voltage lock out
・ Active clamp operation at inductive load switch off
・ AEC Qualified
・ RoHS compliant with pure tin plating
Application
・ Light bulb (~27 W) switching
・ Switching of all types of 14 V DC grounded loads, such as LED, inductor, resistor and capacitor

Description
PD166017 is a Single 6 mΩ N-channel high-side driver in space saving TO-252 package. The device has many
integrated features to enable the successful design of high side load control circuits.
Features
・ Low on-state resistance: 6 mΩ (MAX. at 25°C)
・ Small package: JEDEC 5-pin TO-252
・ Built-in charge pump
・ Short circuit protection
・ Shutdown by over current detection and over load detection
・ Over temperature protection
・ Shutdown with auto-restart on cooling
・ Built-in diagnostic function
・ Proportional load current sensing
・ Defined fault signal in case of abnormal load condition
・ Under voltage lock out
・ Reverse battery protection by self turn on of N-ch MOSFET
・ AEC-Q100 Qualified
・ RoHS compliant with pure tin plating
Application
・ Incandescent light bulb (55 W to 65 W) switching with PWM control
・ Switching of all types of 14 V DC grounded loads, such as LED lighting, resistive heating elements, inductive and capacitive loads.
・ Replacement of fuse and relay

Description
The μPD166019 device is a P-channel high-side switch with diagnostic feedback and embedded protection functions. Due to the adoption of P-channel output switch this device dose not contain charge pump circuit and switching time is controllable by external resistance to IN pin.
Features
・ Low noise by no built-in charge pump
・ Low on-state resistance: 13.5 mΩ
・ Short circuit protection
**- Shutdown by short-circuit detection
・ Over temperature protection
**- Shutdown with auto-restart on cooling
・ Loss of GND protection
・ Small multi-chip package: JEDEC 5-pin TO-252
・ Built-in Diagnostic function
**-Defined fault signal in case of thermal shutdown and/or short circuit shutdown via IN pin.

Description
The NR4211TH product consists of InAIAs-APD (avalanche photo diode) ROSAs (Receiver Optical Sub-Assembly) with internal pre-amplifiers designed for 10 Gb/s long-reach optical transceivers such as the XENPAK/X2/XFP and Transponder. These modules are ideal as receivers for IEEE 10G BASE and SONET OC-192 systems and D-WDM systems.
Features
• XMD-MSA compliant ROSA
• 10 Gb/s high sensitivity InAlAs-APD
• +3.3 V transimpedance pre-amplifier
• Minimum receiver sensitivity Pr = −27.5 dBm
• Operating case temperature TC = −5 to +90℃
• Transimpedance Zt = 6 000 Ω (Single-ended)
• Cut-off frequency fC = 7.5 GHz
• With DCA function (Cross point control)
• With flexible printed circuit

Description
The NV4V41SF is a high output blue-violet laser diode with a wavelength of
405 nm. A newly developed LD chip structure achieves a high optical power
output of 600 mW (CW).
Features
• High optical output power Po = 600 mW @CW
• Peak wavelength λp = 400 to 405 nm
• Multi transverse mode (lateral)
• Operating temperature range TC = 0 to +30℃
• φ 5.6 mm CAN package
Applications
• Blue-violet laser light source
• Light source for direct exposure equipment
• Light source for industrial manufacturing equipment

Description
The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Features
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −5 to +85℃
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.2 mm

Description
The NX6350GP series is a 1270, 1290, 1310, 1330 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with
InGaAs monitor PIN-PD.
Applications
• 40GBASE-LR4
• 10 Gb/s E-PON ONU
• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
Features
• Optical output power PO = 8.5 mW
• Low threshold current Ith = 8 mA
• Differential efficiency ηd = 0.35 W/A
• Wide operating temperature range TC = −5 to +85℃
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 7.5 mm

Description
The NX8663JB-BC is a 1 650 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) pulsed
laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of
Optical Time Domain Reflectometer (OTDR).
Features
• Distributed Feed-Back (DFB) pulsed laser diode
• High output power Pf = 80 mW TYP. @ IFP = 450 mA, PW = 10 μs, Duty = 1%
• Wavelength λp = 1 650 nm TYP.
• Internal thermoelectric cooler, thermistor
• Hermetically sealed 14-pin Dual-In-Line Package
• Single mode fiber pigtail

Description
The PS9124 is an optically coupled high-speed, isolator containing a GaAlAs LED on the input side and a photodiode
and a signal processing circuit on the output side on one chip.
Features
• Low power consumption (VCC = 3.3/5 V)
• Small package (SO-5)
• High-speed response (tPHL = 75 ns MAX., tPLH = 75 ns MAX.)
• High-speed (10 Mbps)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• Open collector output
• Embossed tape product : PS9124-F3 : 2 500 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• DIN EN60747-5-5 (VDE0884-5) :2011-11 approved: No. 40008902 (Option)
Applications
• PDP
• FA Network

Features
・ Long creepage distance (14.5 mm MIN.)
・ Large peak output current (2.5 A MAX., 2.0 A MIN.)
・ High speed switching (tPLH, tPHL = 0.15 μs MAX.)
・ UVLO (Under Voltage Lock Out) protection with hysteresis
・ High common mode transient immunity (CMH, CML = ±25 kV/μs MIN.)
・ 8-pin LSDIP (Long Creepage SDIP) type
・ Embossed tape product: PS9905-F3: 1 000 pcs/reel
・ Pb-Free Product
・ Safety standards
**・ UL approved: No. E72422
**・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
**・ SEMKO approved: No. 1122994
**・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40034588 (Option)

Features
・ Long creepage distance (14.5 mm MIN.)
・ High common mode transient immunity (CMH, CML = ±15 kV/μs MIN.)
・ High-speed response (tPHL = 100 ns MAX., tPLH = 100 ns MAX.)
・ Low power consumption (VCC = 3.3/5V)
・ 8-pin LSDIP (Long Creepage SDIP) type
・ Embossed tape product: PS9924-F3: 1 000 pcs/reel
・ Pb-Free product
・ Safety standards
**・ UL approved: No. E72422
**・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
**・ SEMKO approved: No. 1122994
**・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40034588 (Option)

Description
R2A20135 is LED lighting controller IC with dimming function. High accuracy LED current feed-back system makes more efficient LED performance. With non-Isolation step-down control makes it possible to reduce external parts and realize high power factor and efficiency. Moreover, this IC builds in the dimming function and can control many types dimming mode such as Triac, PWM, and DC dimming.
Switching mode can chosen Zero Current detect Mode or Fixed Frequency Mode according to the required features. By the Constant On Time control, both modes have power factor correct function. Zero Current detect Mode is better performance for noise immunity, and Fixed Frequency Mode is for power factor correction and THD.
Features
・ Absolute Maximum Ratings
**・ Supply voltage Vcc: 24 V
**・ Operating junction temperature Tjopr: –40 to +150°C
・ Electrical characteristics
**・ UVLO operating start voltage VH: 12 V ± 0.8 V
**・ UVLO operating shutdown voltage VL: 9.2 V ± 0.7 V
**・ UVLO hysteresis voltage Hysuvl: 2.8 V ± 0.7 V
・ Functions
**・ Dimming function (Triac, PWM, DC dimming)
**・ Zero current detection mode (when Rrt is OPEN)
**・ Fixed frequency mode (when Rrt is connected by GND)
**・ Adjustable switching frequency (when Rrt is connected by GND)
**・ Package lineup: Pb-free SOP-8 (JEDEC)

Features
・ Low forward voltage drop and suitable for high efficiency rectifying.
・ Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design.

Features
・ Low reverse current and suitable for high efficiency rectifying.
・ Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design.

Features
・ Low reverse current and suitable for high efficiency rectifying.
・ Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design.

Features
・ IT (RMS) : 12A
・ VDRM : 800 V
・ Tj: 150 ℃
・ IFGTI, IRGTI, IRGT III:30 mA
・ Viso:1800V
・ The Product guaranteed maximum junction temperature 150℃
・ Insulated Type
・ Planar Passivation Type
・ UL Recognized: File No. E223904

Features
・ IT (RMS) : 20 A
・ VDRM : 800 V
・ IFGTI, IRGTI, IRGT III : 30 mA
・ The Product guaranteed maximum junction temperature 150℃
・ Non-Insulated Type
・ Planar Type

Features
・ IT (RMS) : 5 A
・ IFGTI, IRGTI, IRGT III: 30 mA
・ Non-Insulated Type
・ Planar Passivation Type

Features
・ IT (AV) : 6 A
・ VDRM : 600 V
・ IGT: 10mA
・ Viso : 2000 V
・ Insulated Type
・ Planar Type
・ UL Recognized: File No. E223904--

Features
・ Complements to N0201S.
・ VCEO = -25 V
・ IC(DC) = -1.0 A
・ Miniature package SOT-23F (2SB798: Package variation of 3pPoMM)

Features
・ Complements to N0201R.
・ VCEO = 30 V
・ IC(DC) = 1.0 A
・ Miniature package SOT-23F (2SD999: Package variation of 3pPoMM)

Features
・ Complements to N0202S.
・ VCEO = -20 V
・ IC(DC) = -2.0 A
・ Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)

Features
・ Complements to N0500S.
・ VCEO = -50 V
・ IC(DC) = -0.7 A
・ Miniature package SOT-23F (2SB799: Package variation of 3pPoMM)

Features
・ Complements to N0500R.
・ VCEO = 50 V
・ IC(DC) = 0.7 A
・ Miniature package SOT-23F (2SD1000: Package variation of 3pPoMM)

Features
・ Complements to N0501S.
・ VCEO = -50 V
・ IC(DC) = -1.0 A
・ Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM)

Features
・ Complements to N0501R.
・ VCEO = 50 V
・ IC(DC) = 1.0 A
・ Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM)

Features
・ Complements to N0800S.
・ VCEO = -80 V
・ IC(DC) = -0.3 A
・ Miniature package SOT-23F (2SB800: Package variation of 3pPoMM)

Features
・ Complements to N0800R.
・ VCEO = 80 V
・ IC(DC) = 0.3 A
・ Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM)

Features
・ Complements to N0801S.
・ VCEO = -80 V
・ IC(DC) = -1.0 A
・ Miniature package SOT-23F (2SB804: Package variation of 3pPoMM)

Features
・ Complements to N0801R.
・ VCEO = 80 V
・ IC(DC) = 1.0 A
・ Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM)

Description
This IC facilitates complicated power-on and power-monitoring resets of microcomputers that require the 3.3-V and 1.8-V dual power supplies. It also facilitates change of delay time of reset signal by externally setting resistance and capacity for delay time. By employing complementary open-drain output, desired output such as open-drain output and CMOS output can be obtained.
Features
・ 3.3-V detection voltage : 2.7 V
・ Accuracy of 3.3-V detection voltage : ±1.0%
・ Hysteresis of 3.3-V detection voltage : 5% Typ.
・ 1.8-V detection voltage : 0.9 V Typ.
・ Open-drain/CMOS output
・ 1.8-V PMOS drive output
・ Package : 8-pin SSOP-8/MMPAK-8
・ Operating temperature : –40 to +85℃

FEATURES
・ Low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
・ 4-pin Micro-X plastic (S02) package
APPLICATIONS
・ X to Ku band DBS LNB
・ Other Ku band communication system

FEATURES
・ High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
・ High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
・ High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
・ High ESD tolerance
・ Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
・ 150 MHz Band Radio System
・ 460 MHz Band Radio System
・ 900 MHz Band Radio System

FEATURES
・ High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
・ High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
・ High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm)
・ High ESD tolerance
・ Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
・ 150 MHz Band Radio System
・ 460 MHz Band Radio System
・ 900 MHz Band Radio System

FEATURES
・ The device is an ideal choice for low noise, high gain amplification.
NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
・ PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
・ Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz
・ SiGe: C HBT technology
・ This product is improvement of ESD.
・ Flat-lead 4-pin thin-type super minimold (M04 PKG)

Description
The μPD5902T7K is a CMOS MMIC SPDT (Single Pole Double Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm. This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation. This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.
Features
• Low control voltage : Vcont = 1.3 V MIN., VDD = 2.3 V MIN.
• Low insertion loss : Lins = 0.35/0.40 dB TYP. @ f = 1.0/2.0 GHz
• High isolation : ISL = 45/37 dB TYP. @ f = 1.0/2.0 GHz
• High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2.0 GHz
• High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm)
• No DC blocking capacitors required.
Applications
• GSM and UMTS/LTE main Antenna switching etc.
• Other RF switching Applications.
• Antenna tuning Applications.

Description
The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna
switching and other High Power RF switching applications up to +35 dBm.
This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.
This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.
Features
• Low control voltage : Vcont = 1.3 V MIN.,VDD = 2.3 V MIN.
• Low insertion loss : Lins = 0.4 dB TYP. @ f = 1 GHz
: Lins = 0.5 dB TYP. @ f = 2 GHz
• High isolation : ISL = 35 dB TYP. @ f = 1 GHz
: ISL = 30 dB TYP. @ f = 2 GHz
• High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz
• High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm)
• No DC blocking capacitors required.
Applications
• GSM and UMTS/LTE main Antenna switching
• Diversity Antenna switching
• Antenna tuning Application

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.4V typ. (at IC = 25A, VGE = 15V, Ta = 25°C)
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.4V typ. (at IC = 30A, VGE = 15V, Ta = 25°C)
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.37V typ. (IC = 40A, VGE = 15V, Ta = 25°C)
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ High breakdown-voltage
・ Low Collector to Emitter saturation Voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
・ Short circuit withstand time (6 μs typ.)
・ Trench gate and thin wafer technology (G6H series)

Features
・ High speed switching
・ Low on-state voltage
・ Built in fast recovery diode in one package

Features
・ High speed switching
・ Low on-state voltage
・ Built in fast recovery diode in one package

Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 3.7 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 5550 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 3.3 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 5550 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0434N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 3.7 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 5550 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 4.2 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 7730 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 4.6 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 7730 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 4.6 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 7730 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 3.25 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low Ciss: Ciss = 4900 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.2 mΩ MAX. (VGS = 10V, ID = 55A)
・ Low Ciss: Ciss = 7500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.4 mΩ MAX. (VGS = 10V, ID = 55A)
・ Low Ciss: Ciss = 10500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.75 mΩ MAX. (VGS = 10V, ID = 55A)
・ Low Ciss: Ciss = 10700 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.10 mΩ MAX. (VGS = 10V, ID = 80A)
・ Low Ciss: Ciss = 7500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.40 mΩ MAX. (VGS = 10V, ID = 90A)
・ Low Ciss: Ciss = 10700 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
・Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
・ Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 3.85 mΩ MAX. (VGS = 10V, ID = 30A)
・ Low Ciss: Ciss = 2450 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
・ Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 5.5 mΩ MAX. (VGS = 10V, ID = 30A)
・ Low Ciss: Ciss = 2500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.95 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 4.0 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 4000 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
・ Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.8 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 3.85 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 4000 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5 to 6V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Temperature hysteresis type.
・ High density mounting
・ Power supply voltage applies 12V and 24V.

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5 to 6V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Temperature hysteresis type.
・ High density mounting
・ Power supply voltage applies 12V and 24V.

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Features
・ Low on-resistance
RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-state resistance RDS(on) = 1.9 Ω typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.385 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.325 Ω typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.715 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-state resistance RDS(on) = 1.4 Ω typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 ℃)
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.77 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.58 Ω typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.475 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 13.5 Ω typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
· Low on-resistance
RDS(on) = 9.8Ωtyp. (at ID = 0.5A, VGS = 10V, Ta = 25 °C)
· Low leakage current
· High speed switching

Features
· Low on-resistance RDS(on) = 1.1 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25 ℃)
· Low leakage current
· High speed switching

Features
・ High speed switching
・ Low on-state voltage
・ Built in fast recovery diode in one package

Description
The μPD166015 is an N-channel high side driver with built-in charge pump and embedded protection function. It is also a linear solenoid driver with a built-in differential amplifier.
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent destruction and degradation of the product. When the current flows through the external shunt resistor near the input part of the differential amplifier, the voltage drops at each end of the resistor. The output current can be monitored when the microcomputer reads the output voltage from the amplifier.

Description
The μPD166105 is a high-voltage, dual output, and N-channel low-side intelligent power device with built-in overtemperature-protection, overcurrent-limitation, and disconnection-detection circuits.
It protects itself by shutting down or limiting current when it detects overtemperature or overcurrent.
Output MOS shut down is restarted automatically by cooling of the chip temperature.
When load is normal, a diagnostic output is produced on detection of a flyback voltage.
When load is disconnected, diagnostic output stops.

Description
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
Features
・ High optical output power Po = 175 mW @CW
・ Peak emission wavelength λp = 405 nm TYP.
・ Wide operating temperature range TC = −5 to +85°C
・ φ 3.8 mm small CAN package
APPLICATIONS
・ Blue-violet laser light source

Description
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ 3 Gb/s BTS
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.4 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 6.7 mm

Description
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 10 Gb/s BASE-LR/LW (IEEE802.3ae)
Features
・ Optical output power PO = 8.5 mW
・ Low threshold current Ith = 8 mA
・ Differential efficiency ηd = 0.23 W/A
・ Wide operating temperature range TC = −5 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 6.0 mm

Description
The NX6510GH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ OC-48 IR-2
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.35 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 7.5 mm

Description
The NX6511GH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ OC-48 IR-2
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.35 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 10 mm

Description
The NX6514EH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ OC-48 IR-2
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.35 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 6.7 mm

DESCRIPTION
The PH5502B2NA1-E4 is an ambient illuminance sensor with a photo diode and current amplifier. This product has spectral characteristics close to human eye sensitivity and outputs light current proportional to the ambient brightness.
The PH5502B2NA1-E4 can be used to improve the performance and reduce the power consumption of digital equipment such as FPD-TV sets and mobile phones, by enabling automatic brightness control and automatic switching on and off of lighting systems.
FEATURES
・ Small and thin SON package 2.55 x 1.56 x 0.55mm
・ Spectral characteristics close to human eye sensitivity
Peak sensitivity wavelength 555 nm TYP.
・ Output characteristics proportional to illuminance
・ Large output light current 230 μA TYP.@100 lx (Fluorescent light)
・ Low voltage operation VCC = 1.8 to 5.5V
・ Pb-free
APPLICATIONS
・ FPD TV sets, displays
・ Mobile phones, smartphones
・ Notebook PCs, tablet PCs
・ DSCs, DVCs
・ FA equipment
・ Lighting systems, etc.

DESCRIPTION
The PH5503A2NA1 is an ambient illuminance sensor with a photo diode and current amplifier. This product has spectral characteristics close to human eye sensitivity and outputs light current proportional to the ambient brightness.
The PH5502B2NA1-E4 can be used to improve the performance and reduce the power consumption of digital equipment such as FPD-TV sets and mobile phones, by enabling automatic brightness control and automatic switching on and off of lighting systems.
FEATURES
・ Small and thin SON package 2.55 x 1.56 x 0.55mm
・ Spectral characteristics close to human eye sensitivity
Peak sensitivity wavelength 555 nm TYP.
・ Output characteristics proportional to illuminance
・ Output light current 60 μA TYP.@100 lx (Fluorescent light)
・ Reduced variation of output current among light sources
・ Low voltage operation VCC = 1.8 to 5.5V
・ Pb-free
APPLICATIONS
・ FPD TV sets, displays
・ Mobile phones, smartphones
・ Notebook PCs, tablet PCs
・ DSCs, DVCs
・ FA equipment
・ Lighting systems, etc.

DESCRIPTION
The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor, enabling relatively high switching speed with high load resistor of several kΩ.
The PS2514-1 is in a plastic DIP (Dual In-line Package) and the PS2514L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
・ High isolation voltage (BV = 5 000 Vr.m.s.)
・ High collector to emitter voltage (VCEO = 40 V)
・ Guaranteed maximum switching speed
(toff ≤ 25 μs @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
・ High-speed switching (ton = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
(toff = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
・ Embossed tape product: PS2514L-1-F3: 2 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ CQC approved: CQC11001056759/CQC11001056758, CQC11001056865/CQC11001057073
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
・ Power supply
・ FA equipment
・ Electronic electricity meter

DESCRIPTION
The PS2561F-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
The PS2561F-1 is in a plastic DIP (Dual In-line Package) and the PS2561FL-1 is lead bending type (Gull-wing) for surface mount.
FEATURES
・ Operating ambient temperature: 110°C
・ High Isolation voltage (BV = 5 000Vr.m.s.)
・ High collector to emitter voltage (VCEO = 80V)
・ High current transfer ratio (CTR = 450% TYP.)
・ High-speed switching (tr = 5 μs TYP., tf = 7 μs TYP.)
・ Embossed tape product: PS2561FL-1-F3 : 2 000 pcs/reel
・ Pb-Free product
・ Safety standard
・ UL approved: No. E72422
APPLICATIONS
・ Power meter
・ Telephone/FAX.
・ Electronic electricity meter

DESCRIPTION
The PS9306L and PS9306L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9306L and PS9306L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9306L2 has 8mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9306L and PS9306L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9306L is lead bending type (Gull-wing) for surface mounting.
The PS9306L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
・ Long creepage distance (8mm MIN.: PS9306L2)
・ Half size of 8-pin DIP
・ Peak output current (0.6A MAX., 0.4A MIN.)
・ High speed switching (tPLH, tPHL = 0.4μs MAX.)
・ High common mode transient immunity (CMH, CML = ±25kV/μs MIN.)
・ Embossed tape product : PS9306L-E3, PS9306L2-E3: 2 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ SEMKO approved: No. 1115598
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
・ IGBT, Power MOS FET Gate Driver
・ Industrial inverter
・ IH (Induction Heating)

Description
The PS9307L and PS9307L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9307L and PS9307L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9307L2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9307L and PS9307L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9307L is lead bending type (Gull-wing) for surface mounting.
The PS9307L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

Description
The PS9309L and PS9309L2 are optical coupled high-speed, totem pole output (active high output type) isolators containing a GaAlAs LED on the input side and a photodiode and a signal processing circuit on the output side on one chip.
The PS9309L and PS9309L2 are specified high CMR and pulse width distortion with operating temperature. It is suitable for IPM drive.
The PS9309L is lead bending type (Gull-wing) for surface mounting. The PS9309L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

DESCRIPTION
The PS9505, PS9505L1, PS9505L2 and PS9505L3 are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9505 Series is designed specifically for high common mode transient immunity (CMR), high output current and high switching speed.
The PS9505 Series is suitable for driving IGBTs and MOS FETs.
The PS9505 Series is in a plastic DIP (Dual In-line Package).
The PS9505L1 is lead bending type for long creepage distance.
The PS9505L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
The PS9505L3 is lead bending type (Gull-wing) for surface mounting.
FEATURES
・ Long creepage distance (8mm MIN.: PS9505L1, PS9505L2)
・ Large peak output current (2.5A MAX., 2.0A MIN.)
・ High speed switching (tPLH, tPHL = 0.25μs MAX.)
・ UVLO (Under Voltage Lock Out) protection with hysteresis
・ High common mode transient immunity (CMH, CML = ±25kV/μs MIN.)
・ Embossed tape product: PS9505L2-E3: 1 000 pcs/reel
: PS9505L3-E3: 1 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ SEMKO approved: No. 1115598
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
・ IGBT, Power MOS FET Gate Driver
・ Industrial inverter
・ IH (Induction Heating)

DESCRIPTION
The PS9506, PS9506L1, PS9506L2 and PS9506L3 are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9506 Series is designed specifically for high common mode transient immunity (CMR) and high switching speed.
The PS9506 Series is suitable for driving IGBTs and MOS FETs.
The PS9506 Series is in a plastic DIP (Dual In-line Package).
The PS9506L1 is lead bending type for long creepage distance.
The PS9506L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
The PS9506L3 is lead bending type (Gull-wing) for surface mounting.
FEATURES
・ Long creepage distance (8mm MIN.: PS9506L1, PS9506L2)
・ Peak output current (0.6A MAX., 0.4A MIN.)
・ High speed switching (tPLH, tPHL = 0.4μs MAX.)
・ High common mode transient immunity (CMH, CML = ±25kV/μs MIN.)
・ Embossed tape product : PS9506L2-E3, PS9506L3-E3: 1 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ SEMKO approved: No. 1115598
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
・ IGBT, Power MOS FET Gate Driver
・ Industrial inverter
・ IH (Induction Heating)

Features
・Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)
・ Low reverse current: IR = 1 μA max. (at VR = 360 V)

Features
・ Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 20 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)
・ Low reverse current: IR = 1 μA max. (at VR = 360 V)

Features
・ Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)
・ Low reverse current: IR = 1 μA max. (at VR = 430 V)
・ Isolated package: TO-220FP (2pin)

Features
・ Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.5 V typ. (at IF = 20 A)
・ Low reverse current: IR = 1 μA max. (at VR = 430 V)
・ Isolated package: TO-220FP (2pin)

Features
・ IT (RMS) : 12A
・ VDRM : 700V
・ IFGTI, IRGTI, IRGT III : 50mA
・ Viso : 1800V
・ The Product guaranteed maximum junction temperature 150°C
・ Insulated Type
・ Planar Type
・ UL Recognized : File No. E223904

Features
・ IT (RMS) : 16A
・ VDRM : 800V
・ IFGTI, IRGTI, IRGT III : 30mA
・ The Product guaranteed maximum junction temperature 150°C
・ Non-Insulated Type
・ Planar Type

Features
・ IT (RMS) : 20A
・ VDRM : 800V
・ IFGTI, IRGTI, IRGT III : 30mA
・ Viso : 1800V
・ The Product guaranteed maximum junction temperature 150°C
・ Insulated Type
・ Planar Type
・ UL Recognized : File No. E223904

Features
・ IT (RMS) : 40A
・ VDRM : 600V
・ Tj: 150 °C
・ IFGTI, IRGTI, IRGT :50mA
・ Viso:2000V
・ Insulated Type
・ Planar Passivation Type

Features
・ IT (RMS) : 8A
・ VDRM : 700V
・ IFGTI, IRGTI, IRGT III : 30mA
・ Non-Insulated Type
・ Planar Type
・ Surface Mounted type

Features
・ IT (RMS) : 8A
・ VDRM : 800V(Tj=125 )
・ IFGTI, IRGTI, IRGT III : 30mA
・ Viso: 2000V
・ The Product guaranteed maximum junction temperature 150°C
・ Insulated Type
・ Planar Type
・ UL Recognized: File No. E223904

Features
・ IT (AV) : 0.4A
・ VDRM : 600V
・ IGT: 100μA
・ Planar Type

Features
・ IT (AV) : 3 A
・ VDRM : 600 V
・ IGT: 100 μA
・Viso : 2000 V
Insulated Type
Planar Type
UL Recognized : File No. E223904

Description
The R2A20133D controls a boost converter to provide an active power factor correction.
The R2A20133D adopts critical conduction mode for power factor correction and realizes high efficiency and a low switching noise by zero current switching.
Because the zero current is detected by using the GND current, the ZCD Auxiliary winding is unnecessary.
The feedback loop open detection, two mode overvoltage protection, overcurrent protection are built in the R2A20133D, and can constitute a power supply system of high reliability with few external parts.
Features

• Absolute Maximum Ratings
  • Supply voltage Vcc: 24V
  • Operating junction temperature Tjopr: –40 to +150°C<
• Electrical characteristics
  • UVLO operation start voltage VH: 9.5V ± 0.7V
  • UVLO operation shutdown voltage VL: 8.5V ± 0.4V
  • UVLO hysteresis voltage Hysuvl: 1.0V ± 0.4V
• Functions
  • Boost converter control with critical conduction mode
  • Two mode overvoltage protection and OVP2
    • Mode 1: Dynamic OVP corresponding to a voltage rise by load change
    • Mode 2: Static OVP corresponding to overvoltage in stable.
    • OVP2: OVP2 senses the PFC output voltage by independence pin.
  • Feedback loop, open detection
  • Overcurrent protection
  • Dynamic UVP corresponding to a voltage fall by load change
  • Frequency limiter, adjustable
  • Zero Current Detect (ZCD) delay time, adjustable
  • CS pin's open detection
  • Package lineup: Pb-free SOP-8 (JEDEC)

FEATURES
・ Low noise figure and high associated gain:
NF = 0.45dB TYP., Ga = 13dB TYP. @VDS = 2V, ID = 10mA, f = 12GHz
NF = 0.5dB TYP., Ga = 12dB TYP. @VDS = 2V, ID = 6mA, f = 12GHz (Reference Value)
・ Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
・ DBS LNB gain-stage, Mix-stage
・ Low noise amplifier for microwave communication system

FEATURES
・ Low noise figure and high associated gain:
NF = 0.65dB TYP., Ga = 13.5dB TYP. @ f = 20GHz, VDS = 2V, ID = 10mA
・ K band Micro-X plastic (S03) package
APPLICATIONS
・ 20GHz band DBS LNB
・ Other K band communication system

FEATURES
・ High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
・ High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
・ High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)

FEATURES
・ High Output Power : Pout = 39.5dBm TYP. (VDS = 7.5V, IDset = 200mA, f = 460 MHz, Pin = 25dBm)
・ High power added efficiency : ηadd = 66% TYP. (VDS = 7.5V, IDset = 200mA, f = 460 MHz, Pin = 25dBm)
・ High Linear gain : GL = 22dB TYP. (VDS = 7.5V, IDset = 200mA, f = 460 MHz, Pin = 10dBm)
・ High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
・ Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
・ 150 MHz Band Radio System
・ 460 MHz Band Radio System
・ 900 MHz Band Radio System

DESCRIPTION
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
・ Low voltage operation : VCC = 3.1 to 3.5V (3.3V TYP.)
・ Low current consumption : ICC1 = 25mA TYP. @VCC = 3.3V (LNA-mode)
: ICC2 = 1 μA MAX. @VCC = 3.3V (Bypass-mode)
・ Operation frequency : f = 40 to 1 000MHz
・ Low noise : NF = 3.2dB TYP. @f = 1 000MHz (LNA-mode)
・ Low distortion : IIP3 = +9dBm TYP. @f1 = 500MHz, f2 = 505MHz (LNA-mode)
・ Low insertion loss : Lins = 1.7dB TYP. @f = 1000MHz (Bypass-mode)
・ High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37mm)
APPLICATIONS
・ Low noise amplifier for the digital TV system, etc.

DESCRIPTION
The μPG2430T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN.
This device can operate at frequencies from 0.5 to 6.0GHz, with low insertion loss and high isolation.
This device is housed in a 8-pin plastic TSON (Thin Small Out-line Non-leaded) package and is suitable for highdensity
surface mounting.
FEATURES
・ Switch Control voltage : Vcont (H) = 3.0V TYP., Vcont (L) = 0V TYP.
・ Low insertion loss : Lins = 0.55dB TYP. @ f = 2.5GHz
: Lins = 0.65dB TYP. @ f = 6.0GHz
・ High isolation : ISL = 28dB TYP. @ f = 2.5GHz
: ISL = 25dB TYP. @ f = 6.0GHz
・ Handling power : Pin (0.1dB) = +28.0dBm TYP. @ Vcont (H) = 3.0V, Vcont (L) = 0V
・ High-density surface mounting : 8-pin plastic TSON package (1.5 × 1.5 × 0.37mm)
APPLICATIONS
・ Bluetooth and IEEE802.11a/b/g etc.